3D SOI edge coupler design for high tolerance

We designed and manufactured two single-mode fiber-to-chip three-dimensional (3D) edge couplers with taper semi-cone structures on a 3.5 µm silicon device layer of silicon-on-insulator. The 3D finite-difference time-domain is used to simulate optimize the structure within 1550 nm band. simulation results reveal maximum coupling efficiency above 91.42% for TE mode. 3 dB tolerances mode in horizontal vertical directions are ±4.5 ±1.5 µm, respectively. Laser-direct-writing grayscale lithography inductive coupled plasma-reactive ion etching fabrication couplers. Experimental data show that have about 83.41%